| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1677206 | Thin Solid Films | 2006 | 4 Pages |
Abstract
Amorphous hydrogenated Si-N (a-SiNx:H) alloys were deposited by plasma immersion ion processing using a working pressure of 1.3 Pa of mixtures of SiH4 and N2. Films with N/Si ratios from 0.6 to 1.2 were obtained, as determined by Rutherford backscattering spectrometry (RBS) and elastic recoil detection analysis (ERD). A fixed total H content of 9 at.% was observed in all films. Chemical bonding was investigated by infrared, Raman and X-ray photoelectron (XPS) spectroscopies. These techniques revealed a complex Si chemical environment that evolves towards that of Si3N4 for higher N/Si ratios. This evolution was correlated with the increase of film hardness.
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Authors
L.G. Jacobsohn, R.K. Schulze, L.L. Daemen, I.V. Afanasyev-Charkin, M. Nastasi,