Orientation contrast of secondary electron images from electropolished metals

•A new imaging technique to obtain orientation contrast from SEI in the SEM is reported.•Imaging conditions for obtaining orientation contrast from SEI are defined.•The mechanism responsible for the formation of the orientation contrast is explained.•An application example of this new imaging method is given.

Orientation contrast obtained by an in-lens secondary electron detector in a scanning electron microscope from electropolished/etched metals is reported. The imaging conditions for obtaining such orientation contrast are defined. The mechanism responsible for the formation of the orientation contrast is explained, and an application example of this new imaging method is given.