| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1677519 | Ultramicroscopy | 2013 | 9 Pages |
This paper presents a near-field ellipsometry method for nano-scale thin film characterization. The method is based on a reflection configuration of near-field optical detection. In the method, a new set of ellipsometry equations is established by taking into consideration the near-field sample–probe interaction and the topography of the thin film. Experimental and simulation results have shown that the proposed near-field ellipsometry is able to attain precise thin film characterization with nano-scale lateral resolution.
► The proposed near-field ellipsometry is able to characterize thin films in nano-scale lateral resolution. ► The characterization is done in a reflection configuration which is more practical. ► The near-field ellipsometry considers the probe–sample interaction and the topography in proximity of the thin film surface.
