Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1677729 | Ultramicroscopy | 2013 | 8 Pages |
Abstract
⺠A method proposed for determining polarity and defect core structure of AlN. ⺠The polarity and dislocation core structures were determined from a single image. ⺠Al and N atomic columns of spacing 0.109 nm were distinguished. ⺠Atomic configurations of 10- and 12-atom ring were derived at atomic level. ⺠The method is valid for other binary semiconducting compounds.
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Y.X. Cui, Y.M. Wang, C. Wen, B.H. Ge, F.H. Li, Y. Chen, H. Chen,