| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1677797 | Ultramicroscopy | 2011 | 6 Pages |
Abstract
⺠We visualize SiGe nanostructures by mapping the sample with tip-enhanced Raman spectroscopy. ⺠Appropriate alignment of SiGe sample reduces intensive far-field background signal. ⺠Results demonstrate non-destructive strain characterization on sub-50 nm scale in semiconductors.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Peter Hermann, Michael Hecker, Dmytro Chumakov, Martin Weisheit, Jochen Rinderknecht, Artem Shelaev, Pavel Dorozhkin, Lukas M. Eng,