| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1677981 | Ultramicroscopy | 2011 | 5 Pages |
Abstract
The atom probe analysis of a full gate stack (metal gate/high-k dielectric) in a 3D finFET is reported. The measurement reliability in this kind of heterogeneous structure is discussed in the light of different artefacts, i.e. mass overlap and 3D reconstruction artefacts.
Research highlights► Analysis of high-k metal gate finfet using atom probe. ► Investigations of the influence of laser wavelength/laser power in assessing reliable concentration. ► Description/interpretation of the 3D reconstruction artefacts based on the field evaporation properties of the different analysed phases.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
M. Gilbert, W. Vandervorst, S. Koelling, A.K. Kambham,