Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1678405 | Ultramicroscopy | 2008 | 4 Pages |
Abstract
Fabrication of nanometre-scale structures in short timescales and with high throughput has great importance in the future of nanoscale science and technology. We show that the local oxidation of hydrogen-passivated silicon surfaces by intermittent-contact mode atomic force microscopy can be applied on timescales as low as 500 ns to create single oxide nanostructures with dimensions of 0.6×15 nm2. Furthermore, we report on preliminary experiments demonstrating that local oxidation can also be achieved with relative tip-sample speeds in excess of 2 cm s−1 in order to pattern larger areas. This was realised using a high-speed scan stage based on a quartz crystal resonator operating at 20 kHz.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
J.A. Vicary, M.J. Miles,