Electrostatic force microscopy measurements of charge trapping behavior of Au nanoparticles embedded in metal–insulator–semiconductor structure

Charge trapping properties of electrons and holes in Au nanoparticles embedded in metal–insulator–semiconductor (MIS) on p-type Si (1 0 0) substrates were investigated by electrostatic force microscopy (EFM). The Au nanoparticles were prepared with a unique laser irradiation method and charged by applying a bias voltage between EFM tip and sample. The EFM system was used to image charged areas and to determine quantitatively the amount of stored charge in the Au nanoparticle-inserted MIS structure. In addition, charge trapping characteristics of the samples were carried out with electrical measurements, such as capacitance–voltage and current–voltage measurement for memory characteristics. Finally, the comparison of EFM results with the electrically measured data was done to determine the amount of stored charge in the Au nanoparticle-inserted MIS structure, confirming the usefulness of EFM system for the characterization of nanoparticle-based non-volatile devices.