| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1678556 | Ultramicroscopy | 2008 | 9 Pages |
Abstract
The ultra-HVEM with an accelerating voltage of 3 MV at Osaka University is capable of achieving excellent penetration and resolution for thick specimens. We obtained images of 5-μm-thick slices tilted at angles of up to 70° for biological samples and observed stick-shaped samples of Si devices free from missing zone. These features make the ultra-HVEM an invaluable extension of 3D observation by electron tomography. In this paper, we introduce aspects of ultra-HVEM tomography; specifically, the magnification, the amount of image blurring for thick samples and the electron staining method. Finally, we give some typical applications in the fields of cell biology, pathology and electrical engineering.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Akio Takaoka, Toshiaki Hasegawa, Kiyokazu Yoshida, Hirotaro Mori,