Analysis of defects in microcrystalline islands in amorphous silicon films with a Scanning Charge-Transient Microscope

In contrast to earlier investigations of defects in micron-sized field effect transistors, the sensitivity of the instrument makes it possible to investigate the defects in simple capacitors without the need to make use of the gain of the transistor. Thus, it can be combined with a scanning force or tunnelling microscope and perform local analysis of selected areas of the sample.