| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1678864 | Ultramicroscopy | 2009 | 5 Pages |
Abstract
A phenomenological method is developed to determine the composition of materials, with atomic column resolution, by analysis of integrated intensities of aberration-corrected Z-contrast scanning transmission electron microscopy images. The method is exemplified for InAsxP1−x alloys using epitaxial thin films with calibrated compositions as standards. Using this approach we have determined the composition of the two-dimensional wetting layer formed between self-assembled InAs quantum wires on InP(0 0 1) substrates.
Keywords
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
S.I. Molina, D.L. Sales, P.L. Galindo, D. Fuster, Y. González, B. Alén, L. González, M. Varela, S.J. Pennycook,