Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1679075 | Ultramicroscopy | 2008 | 6 Pages |
Abstract
GaAs specimens containing p-n junctions have been prepared using focused ion beam (FIB) milling for examination using off-axis electron holography. By lowering the FIB operating voltage from 30 to 8Â kV, we have shown a systematic reduction of the electrically 'inactive' thickness from 220 to 100Â nm, resulting in a significant increase in the step in phase measured across the junctions as well as an improvement in the signal-to-noise ratio. We also show that the step in phase measured across the junctions can be influenced by the intensity of the electron beam.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
David Cooper, Robert Truche, Jean-Luc Rouviere,