Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1679759 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2016 | 5 Pages |
Abstract
The continuous downscaling of Metal Oxide Semiconductor (MOS) devices has reached a limit with SiO2 as a gate dielectric material. Introducing high-k dielectric materials as a replacement for the conservative SiO2 is the only alternative to reduce the leakage current. HfO2 is a reliable and an impending material for the wide usage as a gate dielectric in semiconductor industry. HfO2 thin films were synthesized by RF sputtering technique. Here, we present a study of Swift Heavy Ion (SHI) irradiation with100Â MeV Ag ions for studying the optical properties as well as 80Â MeV Ni ions for studying the electrical properties of HfO2/Si thin films. Rutherford Backscattering Spectrometry (RBS), Field Emission Scanning Electron Microscope (FESEM), energy-dispersive X-ray spectroscopy (EDS), profilometer and I-V (leakage current) measurements have been employed to study the SHI induced effects on both the structural, electrical and optical properties.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
N. Manikanthababu, M. Dhanunjaya, S.V.S. Nageswara Rao, A.P. Pathak,