| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1679763 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2016 | 4 Pages |
Abstract
An n-GaN/n-AlGaN/p-GaN light emitting diode (LED) structure was implanted with Eu ions. High temperature high pressure annealing at 1400 °C efficiently decreases implantation damage and optically activates the Eu ions. However, the electrical properties of the p–n junction deteriorate possibly due to the formation of conducting paths along dislocations during the extreme annealing conditions.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
D. Nd. Faye, M. Fialho, S. Magalhães, E. Alves, N. Ben Sedrine, J. Rodrigues, M.R. Correia, T. Monteiro, M. Boćkowski, V. Hoffmann, M. Weyers, K. Lorenz,