| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1679766 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2016 | 7 Pages |
N-channel depletion MOSFETs were irradiated with 4 MeV Proton and Co-60 gamma radiation in the dose range of 100 krad(Si) to 100 Mrad(Si). The electrical characteristics of MOSFET such as threshold voltage (Vth), density of interface trapped charges (ΔNit), density of oxide trapped charges (ΔNot), transconductance (gm), mobility (μ), leakage current (IL) and drain saturation current (ID Sat) were studied as a function of dose. A considerable increase in ΔNit and ΔNot and decrease in Vth,gm, μ, and ID Sat was observed after irradiation. The results of 4 MeV Proton irradiation were compared with that of Co-60 gamma radiation and it is found that the degradation is more for the devices irradiated with 4 MeV Protons when compared with the Co-60 gamma radiation. This indicates that Protons induce more trapped charges in the field oxide region when compared to the gamma radiation.
