| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1679888 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2015 | 4 Pages |
In0.18Ga0.82N films were irradiated with 4 MeV 84Kr and 8.9 MeV 209Bi ions to various fluences at room temperature. The irradiated films were analyzed by means of Rutherford backscattering/channeling (RBS/C) and high resolution X-ray diffraction (HRXRD). The RBS/C measurements show that under the irradiation conditions, the relative lattice disorder in the films, obtained from the normalized backscattering yield, exhibits a rapid increase in the range from ∼2% to 68%. There is also an increasing lattice expansion of the films with increasing ion fluence, as determined by the HRXRD measurements. At a comparable level of lattice disorder, the Kr irradiation leads to a more pronounced lattice expansion than the Bi irradiation. This may be attributed to a larger portion of the single interstitials in the films produced by the lighter Kr ion irradiation.
