| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1679986 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2014 | 4 Pages |
•Neutron-enhanced annealing was observed for irradiation damage in Si below 90 °C.•The irradiation was performed in a nuclear reactor without intentional heating.•Reduction of damage peaks was detected by Rutherford backscattering/channeling.•The annealing efficiency was comparable to that of ion-beam annealing.
The effect of neutron irradiation on recovery (annealing) of irradiation damage has been investigated for self-ion implanted Si. A damage layer was introduced by 200 keV Si+ implantation to a fluence of 5 × 1014 Si/cm2 at room temperature. The damaged samples were neutron-irradiated to 3.8 × 1019 n/cm2 (fast neutron), without intentional heating, in the core of the Kyoto University Reactor. During neutron irradiation, the samples were heated only by nuclear reactions, and the irradiation temperature was estimated to be less than 90 °C. The damage levels of the samples were characterized by Rutherford backscattering with channeling. Reduction of damage peaks as a result of neutron irradiation was clearly observed in the samples. The annealing efficiency was calculated to be 0.44 defects/displacement.
