| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1680200 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2015 | 4 Pages |
•Alumina crystals (Al2O3:C) were studied after exposures with doses up to 106 Gy.•PL and PLE spectra of alumina crystals were measured after exposure to high-dose.•New wide emission band was found in the PL spectra of irradiated crystals.•High dose irradiations give rise to charged aggregate F2-type centers.•Aggregate centers are responsible for the change in PL spectra and TL yield.
Luminescent spectroscopy is used to show formation of new trapping centers of charge carriers in anion-defective alumina crystals at radiation-induced transformations of F and F+-centers created by oxygen vacancies when exposed to high-dose gamma-radiation. A new wide band in the range 440–700 nm was registered in the photoluminescence spectrum at excitations with UV photons. High-dose irradiation of the crystals leads to appearance of F2-type aggregate centers in different charged states. These centers are additional traps of charge carriers. The new traps increase a luminescent yield at high-dose irradiation with gamma-rays and an electron beam.
