Formation of silver nanoparticles in silicon by metal vapor vacuum arc ion implantation

Nano-composites of silver particles embedded in silicon matrix were fabricated by 50-kV ion implantation using a high-beam-current metal vapor vacuum arc ion source. A dynamic model accounting for the implantation and associated sputtering process reaching a steady state was introduced to analyze the depth profile of the Ag in Si. Upon annealing at an elevated temperature, the Ag nanoparticles were found to recrystallize and grow larger in size, although they were mostly amorphous when first implanted. Heating to 400 °C resulted in out-diffusion Ag atoms and formation of Ag nanoparticles at the Si surface. A primitive pn-diode was fabricated by solid phase epitaxy that converts the amorphized n-type Si into crystalline p-type Si aluminum.