Article ID Journal Published Year Pages File Type
1680632 Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 2015 5 Pages PDF
Abstract

•Solid phase epitaxial growth of amorphous 6H-SiC was investigated.•Recrystallization initially nucleates and grows at the interface between the amorphous layer and 6H-SiC substrate.•Recrystallization rate is related to the implantation-induced damage and concentration of He impurity.•The region of recrystallization contains 3C-SiC and 6H-SiC with different crystalline orientations.

Solid phase epitaxial growth of amorphous 6H-SiC created by 15 keV He ion implantation to doses of 1.5 × 1016, 5 × 1016 and 1 × 1017 cm−2 at room temperature (RT) followed by annealing ranging from 600 °C to 900 °C for 30 min was investigated. The recrystallization process was investigated via cross-sectional transmission electron microscopy (XTEM). Recrystallization initially nucleates and grows at the interface between the amorphous layer and 6H-SiC substrate. In the middle of the amorphous layer, recrystallization nucleation is inhibited. Recrystallization rate is related to the implantation-induced damage and concentration of He impurity. The Fourier transformed images denote that the region of recrystallization contains 3C-SiC and 6H-SiC with different crystalline orientations. Besides, for the 1 × 1017 cm−2 implanted sample, partial areas are kept amorphous in the damaged layer. The threshold temperature of full recrystallization of He ion-implantation-induced amorphization in 6H-SiC and the previous observations on other ions implantation, such as Ne, Ar, Xe etc is compared. The possible reasons are discussed.

Related Topics
Physical Sciences and Engineering Materials Science Surfaces, Coatings and Films
Authors
, , ,