Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1680796 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2014 | 6 Pages |
Abstract
Using molecular-dynamics simulation, we study the impact of 3 keV Ar and Xe ions on a β-SiC (1 1 1) surface covered by a single graphene layer. At glancing ion incidence angles, we observe the ions to undergo interface channeling between the graphene and the first SiC surface layer. This behavior is particularly pronounced for Xe ions, where at incidence angles of 70–75° more than 50% of the ions are channeled. This process is accompanied by abundant damage production and sputtering in the graphene layer. Similarities and differences to subsurface channeling in elemental materials are discussed.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Yudi Rosandi, Herbert M. Urbassek,