| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1680849 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2014 | 4 Pages |
Abstract
The microstructure of 4H–SiC samples subsequently irradiated with low energy He (10 keV), Ti (220 keV) and high energy (167 MeV) Xe ions has been studied using cross-sectional transmission electron microscopy. It was found that xenon ions with fluences above 1013 cm−2 restore crystallinity in a heavily damaged partially amorphous zone. No, or negligible damage recovery is observed in fully amorphized layers of silicon carbide.
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Authors
V.A. Skuratov, J. O’Connell, A.S. Sohatsky, J. Neethling,