Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1680894 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2012 | 5 Pages |
Abstract
An analytic approximation is presented that allows a straightforward calculation of impurity concentration depth profiles from a measured Rutherford backscattering spectrum. The depth scale calculations consider energy-dependent stopping power data. Calculation of the concentration assumes Rutherford cross sections including electron screening effects. The solution for the depth scale has been verified to be within 2% of the exact numerical solution in the energy range down to 20% of the incident energy. The experimental depth profiles obtained for Au in Al and Ir in Si using MeV 12C12C projectile ions show good agreement with the present approximation.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
D. Shakhvorostov, W.N. Lennard, P.R. Norton,