Ion-beam synthesis of magnetic semiconductors

This review focuses on current research on the topic of ion beam based approaches for the fabrication of magnetic semiconductors. Among them, classic semiconductors such as Si, Ge, GaAs as well as solid–gas compounds such as ZnO or GaN doped with transition metals are currently in the focus of research. Those are considered to be basic materials for future spintronics devices. In the review also possible pitfalls leading to misinterpretation of the data obtained will be discussed.