Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1680941 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2012 | 4 Pages |
Abstract
In order to characterize a possible modification due to high-density electronic excitation, thin films of CeO2 have been irradiated with 10-MeV Ni and 120-MeV Xe ions, both having the same nuclear stopping powers, while having different electronic stopping powers. The comparison of the fluence dependence of X-ray diffraction (XRD) peaks suggests that the defect production cross section for 120-MeV Xe is nearly one order of magnitude higher than that for 10-MeV Ni. The comparative study demonstrates the prominent damage observed for 120-MeV Xe irradiation is due to high electronic energy deposition.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
N. Ishikawa, K. Takegahara,