Article ID Journal Published Year Pages File Type
1681055 Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 2014 5 Pages PDF
Abstract

This work is aimed to determine the threshold of dense ionization induced damage formation and their morphology in sapphire single crystals irradiated with 1.2 MeV/amu Xe ions. Cross-sectional TEM examination of r-oriented Al2O3 specimens irradiated to fluences of 2 × 1012 and 2 × 1013 cm−2 has revealed discontinuous ion tracks visible from the irradiated surface up to a depth of 7.6 ± 0.1 μm. According to the SRIM code calculation, the threshold electronic stopping power for track formation in Al2O3 is within the range 9.8 ÷ 10.5 keV/nm. This value agrees with those predicted by both inelastic and analytical thermal spike models.

Related Topics
Physical Sciences and Engineering Materials Science Surfaces, Coatings and Films
Authors
, , , ,