| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1681080 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2014 | 4 Pages |
Abstract
The microstructural changes of 4H-SiC samples dual irradiated with either low energy He (10 keV) or Ti (220 keV) and high energy (167 MeV) Xe ions has been studied using cross-sectional transmission electron microscopy. It was found that xenon ions with fluences above 1013 cm−2 restore crystallinity in a heavily damaged partially amorphous zone. No significant damage recovery was observed in fully amorphized layers of silicon carbide apart from a 5% reduction in the amorphous layer thickness.
Keywords
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Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
J.H. O’Connell, V.A. Skuratov, A.S. Sohatsky, J.H. Neethling,