Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1681082 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2014 | 6 Pages |
Abstract
The RBS/c measurements show distinctly different annealing behavior of displaced Si atoms at doses below or above the threshold for helium bubble formation. The RBS/c yield in the peak damage region of the specimen implanted to 3 Ã 1016 He-ions cmâ2 shows an increase on the subsequently thermal annealing above 873 K, which is readily ascribed to the extra displacement of Si atoms due to helium bubble growth. The RBS/c yield in the specimen implanted to a lower ion fluence of 1.5 Ã 1016 He-ions cmâ2 decreases monotonously on annealing from ambient temperatures up to 1273 K. The PBDB measurements supply evidence of clustering of vacancies at temperatures from 510 to 1173 K, and dissociation of vacancy clusters above 1273 K. The similarity of annealing behavior in PBDB profiles for helium implantation to 1 Ã 1016 and 3 Ã 1016 ions cmâ2 is ascribed to the saturation of trapping of positrons in vacancy type defects in the damaged layers in the specimens helium-implanted to the two dose levels.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Chonghong Zhang, Yin Song, Yitao Yang, Chunlan Zhou, Long Wei, Hongji Ma,