Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1681091 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2012 | 4 Pages |
Abstract
A three-dimensional medium energy ion scattering (3D-MEIS) method has been developed using a commercial MEIS apparatus. This method consists of filtering the energy of the ions scattered by the sample and measuring their two-dimensional angular distribution over a large region. These cartographies of the scattered particles reveal the angular positions of the crystallographic directions and atomic planes. The method is also element sensitive and allows depth profiling by selecting the energy of the scattered particles. As an example, the MEIS cartography technique is applied on a 49 nm thick compressively strained Si0.7Ge0.3 layer deposited on a Si (1 0 0) wafer.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
D. Jalabert,