| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1681141 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2014 | 4 Pages |
Abstract
Thin films of C layers were deposited by radiofrequency magnetron sputtering on silicon substrates using three gaseous atmospheres: pure Ar, Ar + H2 and Ar + D2 mixtures. Scanning Electron Microscopy investigations showed that addition of D2 or H2 to main sputtering gas (Ar) leads to the enhancement of the deposition rate while the layer morphology remained columnar. Fourier Transform Infrared Spectroscopy measurements revealed the presence of D–C or H–C chemical bonds in the samples. Ion beam analysis measurements performed by simultaneous recording of the recoiled H and D ions, and of backscattered 4He confirmed the incorporation of hydrogen and deuterium in the deposited carbon thin films.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
D. Pantelica, P. Ionescu, H. Petrascu, C.R. Nita, E. Matei, O. Rasoga, T. Acsente, G. Dinescu,