| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1681216 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2013 | 6 Pages |
Abstract
The integration of III–V semiconductor material within silicon technology is crucial for performance of advanced electronic devices. This paper presents the investigations of microstructural and opto-electronic properties of GaAs quantum dots (QDs) formed in silicon by means of sequential ion implantation and flash lamp annealing (FLA). Formation of crystalline GaAs QDs with well-defined crystal orientation and conductivity type was confirmed by high resolution transmission electron microscopy and μ-Raman spectroscopy. The influence of the post implantation millisecond-range annealing on the evolution of the nanoparticles size, shape, crystallographic orientation and doping type of GaAs QDs is discussed.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
S. Prucnal, M.O. Liedke, Shengqiang Zhou, M. Voelskow, A. Mücklich, M. Turek, J. Zuk, W. Skorupa,