Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1681269 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2016 | 9 Pages |
Abstract
Type III silica samples were implanted with O using a multi-energy process that produced a layer of constant concentration to within ±5% beginning â¼80 nm from the surface and extending to â¼640 nm below the surfaces of the samples. The concentrations of excess oxygen in the layer ranged from 0.035 to â¼2.1at.%. In these samples we show that Eâ² centers and NBOHCs, as well as the normal cadre of ODC (II) centers, were suppressed, and the optical absorption from 4.7 to 6.4 eV was primarily due to oxygen excess defects. Using Gaussian fitting techniques to examine the optical difference spectra, we have been able to identify four defect centers that are related to excess oxygen defect bands at 4.76 eV, 5.42 eV, 5.75 eV and 6.25 eV.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
R.H. III, S.J. Robinson,