| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1681279 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2016 | 5 Pages |
Room temperature ferromagnetism was observed in both C- and O-implanted GaN films, which were irradiated by 80 keV C/O-ions with respective dose of 5 × 1016 and 2 × 1017 ions/cm2. Positron annihilation spectroscopy was used to explore the magnetic origin and the correlation between the magnetism and structural features. The results reveal that carbon-ions play an important role in the stable ferromagnetism in C-implanted GaN films, while oxygen has no effect on the magnetic properties, even than a weak hysteresis loop was observed in O-implanted sample. This weak ferromagnetism is demonstrated as originated from Ga-related vacancies which induced by implantation. With first-principle calculations, we confirmed that substitutional C-ion at N-site can introduce magnetic moment for 0.8 μB and stabilize ferromagnetic coupling with adjacent Ga-vacancy at room temperature. Moreover, the effect of O-ions was clearly ruled out. Our discussion gives an experimental and theoretical insight of the different origin of ferromagnetism between acceptor and donor non-metal-doped GaN materials.
