| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1681300 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2014 | 4 Pages |
•Field funneling due to SEE in microelectronic device affects the charge collection efficiency.•Charge collection efficiency from alpha particles in a N type SSB device was calculated.•GEANT4, a Monte Carlo code and ATLAS, a numerical code have been used.•The simulation results have been validated through comparison with the experimental results.
There are three different mechanisms of charge collection in a semiconductor charge particle detector, such as the drift of carriers in depletion zone, the drift of carriers in an extended electrical field along the ion track or funneling effect and the diffusion of carriers.In this work, the funneling effect on charge collection efficiency due to alpha particle track in a N type silicon surface barrier detector has been investigated. GEANT4, as Monte Carlo code, has been used for estimation of the deposit energy distribution in the component. In addition, the semiconductor device simulator, ATLAS, has been used in calculation of charge collection efficiency.The simulation results have been validated through comparison with the available experimental results. The calculated charge collection efficiency has good agreement with experiment. Without considering the funneling effect and diffusion, the calculation results underestimate the charge collection efficiency within 60%. Our overall results were indicative of the fact that considering funneling effect, considerably improves the accuracy of the charge collection efficiency estimation.
