Enhanced defects recombination in ion irradiated SiC

Point defects induced in SiC by ion irradiation show a recombination at temperatures as low as 320 K and this process is enhanced after running current density ranging from 80 to 120 A/cm2.Ion irradiation induces in SiC the formation of different defect levels and low-temperature annealing changes their concentration. Some levels (S0, Sx and S2) show a recombination and simultaneously a new level (S1) is formed.An enhanced recombination of defects is besides observed after running current in the diode at room temperature. The carriers introduction reduces the S2 trap concentration, while the remaining levels are not modified. The recombination is negligible up to a current density of 50 A/cm2 and increases at higher current density. The enhanced recombination of the S2 trap occurs at 300 K, which otherwise requires a 400 K annealing temperature. The process can be related to the electron–hole recombination at the associated defect.