| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1681400 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2010 | 5 Pages |
Abstract
Zinc oxides doped with trivalent elements are known as an n-type transparent semiconductor. We have studied ion irradiation effects on electrical properties, atomic structure and optical properties of In-doped ZnO films. We have observed increase in the electrical conductivity and this is ascribed to ion-induced replacement of Zn on lattice site by In.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
N. Matsunami, J. Fukushima, M. Sataka, S. Okayasu, H. Sugai, H. Kakiuchida,