Investigation of phosphorous in thin films using the 31P(α,p)34S nuclear reaction

Phosphorus detection and quantification were obtained, using the 31P(α,p)34S nuclear reaction and Rutherford Backscattering Spectrometry, in deposited silicon oxide films containing phosphorus and in carbon substrates implanted with phosphorus. It was possible to determine the total amount of phosphorus using the resonance at 3.640 MeV of the 31P(α,p)34S nuclear reaction in samples with phosphorus present in up to 23 nm depth. Phosphorous amounts as low as 4 × 1014 cm−2 were detected. Results obtained by nuclear reaction were in good agreement with those from RBS measurements. Possible applications of phosphorus deposition routes used in this work are discussed.