Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1681768 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2016 | 6 Pages |
Abstract
This work reports on the realization of Quantum Ring (QR) and Quantum Dot (QD) like structures on 4H-SiC through SHI implantation and on their Raman studies. 4H-SiC is SHI implanted with Transition Metal (TM) Ni ion at different fluences. It is observed that a vibrational mode emerges as the result of Ni ion implantation. The E2 (TO) and the A1 (LO) are suppressed as the fluence increases. In this paper Raman and AFM studies have been performed at room temperature and the queer anomalies are addressed so new devices can be fabricated.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
A. Ashraf Ali, J. Kumar, V. Ramakrishnan, K. Asokan,