| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1681859 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2012 | 6 Pages |
Abstract
Diffusion behavior of ion implanted cesium into 6H-SiC and CVD-SiC wafers is investigated by Rutherford backscattering spectrometry (RBS) combined with α-particle channeling and scanning electron microscopy (SEM). Implantations were done at room temperature, 350 and 600 °C. A strong temperature dependence of irradiation induced diffusion is observed. Transport mechanisms were studied by isochronal and isothermal annealing methods up to temperatures of 1500 °C. Cesium transport in irradiation damaged SiC is governed by an impurity trapping mechanism of defect structures and is similar in single and polycrystalline SiC.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
E. Friedland, N.G. van der Berg, T.T. Hlatshwayo, R.J. Kuhudzai, J.B. Malherbe, E. Wendler, W. Wesch,