Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1681894 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2012 | 4 Pages |
Abstract
70Ge isotopic nanocrystals embedded in SiO2 films were prepared by ion-implantation and neutron irradiation. Laser Raman scattering (LRS) and photoluminescence (PL) spectra were employed to characterize the samples. After 70Ge+ ions with the dose of 3Â ÃÂ 1016Â cmâ2 and the energy of 150Â keV were implanted with subsequent annealing, the Raman peak of 70Ge nanocrystals is shown at around 305Â cmâ1 due to isotopic effect. It blueshifts to higher wave numbers and the FWHM becomes narrower with increasing annealed temperature. However, The PL peak at 565Â nm from nanocrystals is not exhibited before neutron irradiation due to the quenching of the GeO4 tetrahedra, instead of GeO2 due to Ge insufficiency. A Raman peak position 262Â cmâ1 corresponding to GeO4 tetrahedra, was formed after ion-implantation and could be annihilated by neutron irradiation and subsequent annealing, which help improve the luminescent property of Ge nanocrystals.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
L. Fan, T. Lu, Q. Chen, Y. Hu, S. Dun, Q. Hu, C. You, S. Zhang, B. Tang, J. Dai,