| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1681916 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2010 | 5 Pages |
Abstract
A thermodynamic model of the evolution of microcracks in silicon caused by helium and hydrogen co-implantation during annealing was studied. The crack growth rate relies on the amount of helium atoms and hydrogen molecules present. Here, the crack radius was studied as a function of annealing time and temperature, and compared with experimental results. The mean crack radius was found to be proportional to the annealing temperature and the helium and hydrogen implanted fluence. The gas desorption should be considered during annealing process.
Related Topics
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Authors
B.S. Li, C.H. Zhang, H.H. Zhang, Y. Zhang, Y.T. Yang, L.H. Zhou, L.Q. Zhang,