Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1681926 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2010 | 5 Pages |
Abstract
To elucidate the underlying physics of ion beam assisted deposition (IBAD), irradiation damage effects in magnesia (MgO) and yttria-stabilized zirconia (YSZ) were investigated. Ion irradiations were performed on MgO and YSZ single crystals of three low-index crystallographic orientations using 100 and 150Â keV Ar+ ions over a fluence range from 1Â ÃÂ 1014 to 5Â ÃÂ 1016 Ar/cm2. Damage accumulation was analyzed using Rutherford backscattering spectrometry combined with ion channeling. Damage evolution with increasing ion fluence proceeded via several characteristic stages and the total damage exhibited a strong dependence on crystallographic orientation. For both MgO and YSZ, damage anisotropy was maximal at a stage when the damage saturated, with the (1Â 1Â 0) crystallographic orientation being the most radiation damage resistant. The Ion/Atom ratio deposition parameter reported for IBAD of MgO and YSZ films was found to correlate with the damage plateau stage described above. Finally, the role of the Ion/Atom ratio is discussed in terms of radiation damage anisotropy mechanism.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
I.O. Usov, P.N. Arendt, K.E. Sickafus,