Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1681977 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2013 | 4 Pages |
Nanocrystals of PbSe have been fabricated in a silicon dioxide matrix by sequential low energy ion implantation followed by an electron beam annealing step. Transmission electron microscopy reveals PbSe nanocrystals with typical sizes between 3 and 10 nm in the sub-surface region. Rutherford Backscattering Spectrometry has been used to study the total atomic retention, as a function of implanted atoms, following annealing. Photoluminescence was observed in various samples, at 4 K, as a broad peak between 1.4 and 2.0 μm, with observation of a dependence of the peak wavelength on annealing temperature. Room temperature photoluminescence was observed for samples with a high retention of implanted atoms, demonstrating the importance of nanocrystal density for achieving ambient temperature emission in these systems.