Article ID Journal Published Year Pages File Type
1681979 Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 2013 6 Pages PDF
Abstract

The SiC synthesis through single-beam of C+, and simultaneous-dual-beam of C+ & Si+ ion implantations into a Si substrate heated at 550 °C has been studied by means of three complementary analytical techniques: nuclear reaction analysis (NRA), Raman, and transmission electron microscopy (TEM). It is shown that a broad distribution of SiC nanoprecipitates is directly formed after simultaneous-dual-beam (520-keV C+ & 890-keV Si+) and single-beam (520-keV C+) ion implantations. Their shape appear as spherical (average size ∼4–5 nm) and they are in epitaxial relationship with the silicon matrix.

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Physical Sciences and Engineering Materials Science Surfaces, Coatings and Films
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