| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1681979 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2013 | 6 Pages |
Abstract
The SiC synthesis through single-beam of C+, and simultaneous-dual-beam of C+ & Si+ ion implantations into a Si substrate heated at 550 °C has been studied by means of three complementary analytical techniques: nuclear reaction analysis (NRA), Raman, and transmission electron microscopy (TEM). It is shown that a broad distribution of SiC nanoprecipitates is directly formed after simultaneous-dual-beam (520-keV C+ & 890-keV Si+) and single-beam (520-keV C+) ion implantations. Their shape appear as spherical (average size ∼4–5 nm) and they are in epitaxial relationship with the silicon matrix.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
G. Velisa, P. Trocellier, L. Thomé, S. Vaubaillon, S. Miro, Y. Serruys, É. Bordas, E. Meslin, S. Mylonas, P.E. Coulon, F. Leprêtre, A. Pilz, L. Beck,