Molecular dynamics simulation of Ga+ ion collision process

Molecular dynamics (MD) simulations of 30 keV accelerated Ga ions has been carried out, colliding with a Si surface. Using this procedure the amorphous structural region of the Si was found to expand with the progression of the interface region, that lie between the amorphous structure and the crystalline structure, as fluence increased in the depth direction. The height of the structure is increased and has a peak value around 1.6 × 1015 ion/cm2, the height becomes the negative value beyond the peak, that is, the phenomenon changes from a deformation to a remove. The tendency of distribution for height and depth is a good agreement with an experimental data.