| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1682019 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2013 | 4 Pages |
•LaAlO3 film was grown on GaAs by PEALD.•The LaAlO3 film remain amorphous after 500 °C annealing.•The GaAs/LaAlO3 interface was optimized by in situ NH3 plasma nitridation.•In situ NH3 plasma nitridation improved electric properties of MOS.
In this work, we deposited LaAlO3 film on n-type GaAs by plasma enhanced atomic layer deposition (PEALD). In situ NH3 plasma nitridation of the GaAs surface was introduced to control the interface prior to plasma enhanced atomic layer deposition of LaAlO3. The chemical bonding state of NH3 plasma treated GaAs surface were investigated by X-ray photoelectron spectroscopy (XPS), which indicate that NH3 plasma nitridation can suppress interfacial growth on GaAs substrate. Transmission electron microscopy (TEM) images show the interface between LaAlO3 and GaAs was smooth and there was not obvious interface layer observed. The capacitance–voltage (C–V) and leakage current density–voltage (J–V) measurement indicate that the NH3 plasma nitridation improved the electrical properties of LaAlO3 films on GaAs substrate.
