| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1682032 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2013 | 4 Pages |
Abstract
Si1âxCox magnetic semiconductors were prepared by implanting 200 keV Co ions into p-type Si(1 0 0) wafer at room temperature, followed by 600-900 °C annealing. Room temperature ferromagnetism was observed in all samples and saturation magnetization was enhanced after 900 °C annealing, for which nano-sized (several nm to 50 nm) CoSi2 precipitates were present. It was found that the formation of CoSi2 phase could play an important role in the enhancement of ferromagnetism.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Jihong Chen, Fengfeng Luo, Tiecheng Li, Zhongcheng Zheng, Shuoxue Jin, Zheng Yang, Liping Guo, Congxiao Liu,