| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1682033 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2013 | 4 Pages |
Abstract
We have investigated the morphology and electrical properties of NiSiGe/SiGe contact by C+ ions pre-implanted into relaxed Si0.8Ge0.2 layers. Cross-section transmission electron microscopy revealed that both the surface and interface of NiSiGe were improved by C+ ions implantation. In addition, the effective hole Schottky barrier heights (ΦBp) of NiSiGe/SiGe were extracted. ΦBp was observed to decrease substantially with an increase in C+ ion implantation dose.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
B. Zhang, W. Yu, Q.T. Zhao, D. Buca, U. Breuer, J.-M. Hartmann, B. Holländer, S. Mantl, M. Zhang, X. Wang,