Damage buildup and annealing characteristics in Be-implanted InAs0.93Sb0.07 film

Damage buildup in 80 keV Be-implanted InAs0.93Sb0.07 epitaxial layer grown by liquid epitaxy growth (LPE) with the implantation fluences ranging from 1 × 1013 to 4 × 1015 cm−2 have been detailedly investigated by high resolution X-ray diffraction (HRXRD) and transmission electron microscopy (TEM). The implantation-induced nonlinear maximum perpendicular strain εm as a function of the Be fluence was deduced. Microstructural variation created by damage buildup was analyzed. The characteristics of annealing on the lattice damage were also studied. The created damages can be recovered by rapid thermal annealing at 500 °C for samples with the fluence below 1.0 × 1015 cm−2, but nano-sized residual damages still existed when the fluence reaches 4.0 × 1015 cm−2 due to the poor recrystallization of the small disorder region.