Article ID Journal Published Year Pages File Type
1682287 Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 2012 4 Pages PDF
Abstract

Structural disorder and relocation of implanted Mn in semi-insulating 4H–SiC has been studied. Subsequent heat treatment of Mn implanted samples has been performed in the temperature range 1400–2000 °C. The depth distribution of manganese is recorded by secondary ion mass spectrometry. Rutherford backscattering spectrometry has been employed for characterization of crystal disorder. Ocular inspection of color changes of heat-treated samples indicates that a large portion of the damage has been annealed. However, Rutherford backscattering shows that after heat treatment, most disorder from the implantation remains. Less disorder is observed in the [0 0 0 1] channel direction compared to [112¯3] channel direction. A substantial rearrangement of manganese is observed in the implanted region. No pronounced manganese diffusion deeper into the sample is recorded.

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Physical Sciences and Engineering Materials Science Surfaces, Coatings and Films
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